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preliminary information march 2001 copyright ? alliance semiconductor. all rights reserved. ? AS29LV400 3v 512k x 8/256k 16 cmos flash eeprom 3/20/01; v.0.9.3 alliance semiconductor p. 1 of 25 features ? organization: 512kx8/256kx16 sector architecture - one 16k; two 8k; one 32k; and seven 64k byte sectors - one 8k; two 4k; one 16k; and seven 32k word sectors - boot code sector architecture?t (top) or b (bottom) - erase any combination of sectors or full chip single 2.7-3.6v power supply for read/write operations sector protection high speed 70/80/90/120 ns address access time automated on-chip programming algorithm - automatically programs/verifies data at specified address automated on-chip erase algorithm - automatically preprograms/erases chip or specified sectors hardware reset pin - resets internal state machine to read mode low power consumption - 200 na typical automatic sleep mode current - 200 na typical standby current - 10 ma typical read current jedec standard software, packages and pinouts - 48-pin tsop - 44-pin so; availabillity tbd detection of program/erase cycle completion -dq7 data polling - dq6 toggle bit - dq2 toggle bit -ry/ by output erase suspend/resume - supports reading data from or programming data to a sector not being erased low v cc write lock-out below 1.5v 10 year data retention at 150c 100,000 write/erase cycle endurance logic block diagram x decoder v cc v ss cell matrix y decoder y gating data latch chip enable address latch input/output buffers sector protect/ command register program/erase control v cc detector erase voltage generator program voltage generator timer a0?a17 ce oe stb stb output enable logic ry/ by we r eset dq0?dq15 switches erase voltage byte a-1 pin arrangement 48-pin tsop 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a14 a15 a16 v ss dq15/a-1 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v cc a6 a5 a4 a3 a2 a1 a0 ce v ss oe dq0 dq8 dq1 dq9 dq2 dq10 44-pin so 21 22 dq3 dq11 a10 a11 a12 a13 2 nc 3 a17 4 a7 1 ry / b y 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 43 42 41 44 we a8 a9 reset a8 a9 a10 a11 a12 a13 a14 a15 a16 byte v ss dq15/a-1 dq7 dq14 nc nc we nc nc ry/b y nc dq2 dq10 dq3 dq11 v cc dq4 dq12 dq5 dq6 dq13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 48 47 46 45 44 43 42 41 40 39 38 37 36 35 15 16 34 33 a17 a7 a6 a5 a4 a3 a2 a1 a0 v ss dq0 dq8 dq1 dq9 17 18 19 20 21 22 32 31 30 29 28 27 23 24 26 25 as29lv40 as29lv40 reset byte ce oe selection guide 29lv400-70 29lv400-80 29lv400-90 29lv400-120 unit maximum access time t aa 70 80 90 120 ns maximum chip enable access time t ce 70 80 90 120 ns maximum output enable access time t oe 30 30 35 50 ns
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 2 of 25 functional description the AS29LV400 is an 4 megabit, 3.0 volt flash memory organized as 512kbyte of 8 bits/256kbytes of 16 bits each. for flexible erase and program capability, the 4 megabits of data is divided into eleven sectors: one 16k, two 8k, one 32k, and seven 64k byte sectors; or one 8k, two 4k, one 16k, and seven 32k word sectors. the 8 data appears on dq0?dq7; the 16 data appears on dq0?dq15. the AS29LV400 is offered in jedec standard 48-pin tsop. a 44-pin sop package may be offered in the future. this device is designed to be programmed and erased with a single 3.0v v cc supply. the device can also be reprogrammed in standard eprom programmers. the AS29LV400 offers access times of 70/80/90/120 ns, allowing 0-wait state operation of high speed microprocessors. to eliminate bus contention the device has separate chip enable ( ce ) , write enable ( we ) , and output enable ( oe ) controls. word mode (16 output) is selected by byt e = high. byte mode (8 output) is selected by b y t e = low. the AS29LV400 is fully compatible with the jedec single power supply flash standard. the device uses standard microprocessor write timings to send write commands to the register. an internal state-machine uses register contents to control the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. data is read in the same manner as other flash or eprom devices. use the program command sequence to invoke the on-chip programming algorithm that automatically times the program pulse widths, and verifies proper cell margin. use the erase command sequence to invoke the automated on-chip erase algorithm that preprograms the sector when it is not already programmed before executing the erase operation. the erase command also times the erase pulse widths and verifies the proper cell margins. boot sector architecture enables the system to boot from either the top (AS29LV400t) or the bottom (AS29LV400b) sector. sector erase architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other sectors. a sector typically erases and verifies within 1.0 seconds. hardware sector protection disables both the program and th e erase operations in all, or any combination of the eleven sectors. the device provides true background erase with erase suspend, which puts erase operations on hold to either read data from, or program data to, a sector that is not being erased. the chip erase command will automatically erase all unprotected sectors. when shipped from the factory, AS29LV400 is fully erased (all bits = 1). the programming operation sets bits to 0. data is programmed into the array one byte at a time in any sequence and across sector boundaries. a sector must be erased to change bits from 0 to 1. erase returns all bytes in a sector to the erased state (all bits = 1). each sector is erased individually wi th no effect on other sectors. the device features a single 3.0v power supply operation for read, write, and erase functions. internally generated and regulated voltages are provided for the program and erase operations. a low v cc detector automatically inhibits write operations during power transtitions. the ry/ by pin, data polling of dq7, or toggle bit (dq6) may be used to detect the end of the program or to erase operations. the device automatically resets to the read mode after the program or erase operations are completed. dq2 indicates which sectors are being erased. the AS29LV400 resists accidental erasure or spurious programming signals resulting from power transitions. the control register architecture permits alteration of memory contents only when successful completion of specific command sequences has occured. during power up, the device is set to read mode with all program/erase commands disabled if v cc is less than v lko (lockout voltage). the command registers are not affected by noise pulses of less than 5 ns on oe , ce, or we . to initiate write commands, c e and w e must be a logical zero and o e a logical 1. when the device?s hardware re set pin is driven low, any program/erase operation in progress is terminated and the internal state machine is reset to read mode. if the r e s e t pin is tied to the system reset circuitry and a system reset occurs during an automated on-chip program/erase algorithm, the operating data in the address locations may become corrupted and require rewriting. resetting the device enables the system?s microprocessor to read boot-up firmware from the flash memory. the AS29LV400 uses fowler-nordheim tunnelling to electrically erase all bits within a sector simultaneously. bytes are programmed one at a time using the eprom programming mechanism of hot electron injection.
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 3 of 25 operating modes l = low (v ih ) = logic 1; v id = 10.0 1.0v; x = don?t care. in 16 mode, byte = v ih . in 8 mode, byte = v il with dq8-dq14 in high z and dq15 = a-1. ? verification of sector protect/unprotect during a9 = v id. mode definitions mode ce oe we a0 a1 a6 a9 reset dq id read mfr codellhlllv id hcode id read device code l l h h l l v id hcode read l l h a0 a1 a6 a9 h d out standby hxxxxxxhhigh z output disable l hhxxxxhhigh z write l h l a0 a1 a6 a9 h d in enable sector protect l v id pulse/l l h l v id hx sector unprotect l v id pulse/ll hhv id hx temporary sector unprotect xxxxxxxv id x verify sector protect ? llhlhlv id hcode verify sector unprotect ? llhlhhv id hcode hardware reset xxxxxxxl high z item description id mfr code, device code selected by a9 = v id (9.5v?10.5v), ce = o e = a1 = a6 = l, enabling outputs. when a0 is low (v il ) the output data = 52h, a unique mfr. code for alliance semiconductor flash products. when a0 is high (v ih ), d out represents the device code for the AS29LV400. read mode selected with ce = oe = l, we = h. data is valid in t acc time after addresses are stable, t ce after ce is low and t oe after o e is low. standby selected with ce = h. part is powered down, and i cc reduced to <1.0 a when c e = v cc 0.3v = r es e t . if activated during an automated on-chip algorithm, the device completes the operation before entering standby. output disable part remains powered up; but outputs disabled with o e pulled high. write selected with ce = we = l, oe = h . accomplish all flash erasure and programming through the command register. contents of command register serve as inputs to the internal state machine. address latching occurs on the falling edge of w e or c e , whichever occurs later. data latching occurs on the rising edge w e or c e , whichever occurs first. filters on w e prevent spurious noise events from appearing as write commands. enable sector protect hardware protection circuitry implemented with external programming equipment causes the device to disable program and erase operations for specified sectors. for in-system sector protection, refer to sector protect algorithm on page 14. sector unprotect disables sector protection for all sectors using external programming equipment. all sectors must be protected prior to sector unprotection. for in-system sector unprotection, refer to sector unprotect algorithm on page 14. ve r i f y s e c t o r protect/ unprotect verifies write protection for sector. sectors are protected from program/erase operations on commercial programming equipment. determine if sector protection exists in a system by writing the id read command sequence and reading location xxx02h, where address bits a12?17 select the defined sector addresses. a logical 1 on dq0 indicates a protected sector; a logical 0 indicates an unprotected sector.
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 4 of 25 flexible sector architecture in word mode, there are one 8k word, two 4k word, one 16k word, and seven 32k word sectors. address range is a17?a-1 if byte = v il ; address range is a17?a0 if byte = v ih . te m p o r a r y sector unprotect temporarily disables sector protection for in-system data changes to protected sectors. apply +10v to reset to activate temporary sector unprotect mode. during temporary sector unprotect mode, program protected sectors by selecting the appropriate sector address. all protected sectors revert to protected state on removal of +10v from re set . reset resets the interal state machine to read mode. if device is programming or erasing when reset = l, data may be corrupted. deep power down hold reset low to enter deep power down mode ( < 1 a). recovery time to start of first read cycle is 50ns. automatic sleep mode enabled automatically when addresses remain stable for 300ns. typical current draw is 1 a. existing data is available to the system during this mode. if an address is changed, automatic sleep mode is disabled and new data is returned within standard access times. sector bottom boot sector architecture (AS29LV400b) top boot sector architecture (AS29LV400t) 8 16 size (kbytes) 8 16 size (kbytes) 0 00000h?03fffh 00000h?01fffh 16 00000h?0ffffh 00000h?07fffh 64 1 04000h?05fffh 02000h?02fffh 8 10000h?1ffffh 08000h?0ffffh 64 2 06000h?07fffh 03000h?03fffh 8 20000h?2ffffh 10000h?17fffh 64 3 08000h?0ffffh 04000h?07fffh 32 30000h?3ffffh 18000h?1ffffh 64 4 10000h?1ffffh 08000h?0ffffh 64 40000h?4ffffh 20000h?27fffh 64 5 20000h?2ffffh 10000h?17fffh 64 50000h?5ffffh 28000h?2ffffh 64 6 30000h?3ffffh 18000h?1ffffh 64 60000h?6ffffh 30000h?37fffh 64 7 40000h?4ffffh 20000h?27fffh 64 70000h?77fffh 38000h?3bfffh 32 8 50000h?5ffffh 28000h?2ffffh 64 78000h?79fffh 3c000h?3cfffh 8 9 60000h?6ffffh 30000h?37fffh 64 7a000h?7bfffh 3d000h?3dfffh 8 10 70000h?7ffffh 38000h?3ffffh 64 7c000h?7ffffh 3e000h?3ffffh 16 item description
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 5 of 25 id sector address table read codes key: l =low (v ih ); x =don?t care sector bottom boot sector address (AS29LV400b) top boot sector address (AS29LV400t) a17 a16 a15 a14 a13 a12 a17 a16 a15 a14 a13 a12 0 00000x 0 0 0xxx 1 000010 0 0 1xxx 2 000011 0 1 0xxx 3 0001xx 011xxx 4 001xxx 100xxx 5 010xxx 101xxx 6 011xxx 110xxx 7 100xxx 1110xx 8 101xxx 111100 9 110xxx 111101 10 111xxx 11111x mode a17?a12 a6 a1 a0 code mfr code (alliance semiconductor) x l l l 52h device code 8 t boot x l l h b9h 8 b boot x l l h bah 16 t boot x l l h 22b9h 16 b boot x l l h 22bah sector protection sector address l h l 01h protected 00h unprotected
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 6 of 25 command format 1 bus operations defined in "mode definitions," on page 3. 2 reading from and programming to non-erasing sectors allowed in erase suspend mode. 3 address bits a11-a17 = x = don?t care for all address commands except where program address and sector address are required. 4 data bits dq15-dq8 are don?t care for unlock and command cycles. 5 the unlock bypass command must be initiated before the unlock bypass program command. 6 the unlock bypass reset command returns the device to reading array data when it is in the unlock bypass mode. command sequence required bus write cycles 1st bus cycle 2nd bus cycle 3rd bus cycle 4th bus cycle 5th bus cycle 6th bus cycle address data address data address data address data address data address data reset/read 1 xxxh f0h read address read data reset/read 16 3 555h aah 2aah 55h 555h f0h read address read data 8 aaah 555h aaah autoselect id read 16 3 555h aah 2aah 55h 555h 90h 01h device code 22b9h (t) 22bah (b) 8 aaah 555h aaah 02h device code b9h(t) bah(b) 16 555h aah 2aah 55h 555h 90h 00h mfr code 0052h 8 aaah 555h aaah 52h 16 555h aah 2aah 55h 555h 90h xxx02h sector protection 0001h = protected 0000h = unprotected 8 aaah 555h aaah xxx04h sector protection 0001h=protected 0000h=unprotected program 16 4 555h aah 2aah 55h 555h a0h program address program data 8 aaah 555h aaah unlock bypass 16 3 555 aah 2aa 55h 555 20h 8 aaa 555 aaa unlock bypass program 2 xxx a0h program address program data unlock bypass reset 2 xxx 90h xxx 00h chip erase 16 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h 555h 10h 8 aaah 555h aaah aaah 555h aaah sector erase 16 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h sector address 30h 8 aaah 555h aaah aaah 555h sector erase suspend 1 xxxh b0h sector erase resume 1 xxxh 30h
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 7 of 25 command definitions item description reset/read initiate read or reset operations by writing the read/reset command sequence into the command register. this allows the microprocessor to retrieve data from the memory. device remains in read mode until command register contents are altered. device automatically powers up in read/reset state. this feature allows only reads, therefore ensuring no spurious memory content alterations during power up. id read AS29LV400 provides manufacturer and device codes in two ways. external prom programmers typically access the device codes by driving +10v on a9. AS29LV400 also contains an id read command to read the device code with only +3v, since multiplexing +10v on address lines is generally undesirable. initiate device id read by writing the id read command sequence into the command register. follow with a read sequence from address xxx00h to return mfr code. follow id read command sequence with a read sequence from address xxx01h to return device code. to verify write protect status on sectors, read address xxx02h. sector addresses a17?a12 produce a 1 on dq0 for protected sector and a 0 for unprotected sector. exit from id read mode with read/reset command sequence. hardware reset holding r ese t low for 500 ns resets the device, terminating any operation in progress; data handled in the operation is corrupted. the internal state machine resets 20 s after re set is driven low. ry/by remains low until internal state machine resets. after rese t is set high, there is a delay of 50 ns for the device to permit read operations. byte/word programming programming the AS29LV400 is a four bus cycle operation performed on a byte-by-byte or word- by-word basis. two unlock write cycles precede the program setup command and program data write cycle. upon execution of the program command, no additional cpu controls or timings are necessary. addresses are latched on the falling edge of c e or we , whichever is last; data is latched on the rising edge of c e or w e , whichever is first. the AS29LV400?s automated on-chip program algorithm provides adequate internally-generated programming pulses and verifies the programmed cell margin. check programming status by sampling data on the ry/b y pin, or either the data polling (dq7) or toggle bit (dq6) at the program address location. the programming operation is complete if dq7 returns equivalent data, if dq6 = no toggle, or if ry/b y pin = high. the AS29LV400 ignores commands written during programming. a hardware reset occurring during programming may corrupt the data at the programmed location. AS29LV400 allows programming in any sequence, across any sector boundary. changing data from 0 to 1 requires an erase operation. attempting to program data 0 to 1 results in either dq5 = 1 (exceeded programming time limits); reading this data after a read/reset operation returns a 0. when programming time limit is exceeded, dq5 reads high, and dq6 continues to toggle. in this state, a reset command returns the device to read mode.
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 8 of 25 unlock bypass command sequence the unlock bypass feature increases the speed at which the system programs bytes or words to the device because it bypasses the first two unlock cycles of the standard program command sequence. to initiate the unlock bypass command sequence, two unlock cycles must be written, then followed by a third cycle which has the unlock bypass command, 20h. the device then begins the unlock bypass mode. in order to program in this mode, a two cycle unlock bypass program sequence is required. the first cycle has the unlock bypass program command, a0h. it is followed by a second cycle which has the program address and data. to program additional data, the same sequence must be followed. the unlock bypass mode has two valid commands, the unlock bypass program command and the unlock bypass reset command. the only way the system can exit the unlock bypass mode is by issuing the unlock bypass reset command sequence. this sequence involves two cycles. the first cycle contains the data, 90h. the second cycle contains the data 00h. addresses are don?t care for both cycles. the device then returns to reading array data. chip erase chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional unlock write cycles; and finally the chip erase command. chip erase does not require logical 0s to be written prior to erasure. when the automated on-chip erase algorithm is invoked with the chip erase command sequence, AS29LV400 automatically programs and verifies the entire memory array for an all-zero pattern prior to erase. the 29lv400 returns to read mode upon completion of chip erase unless dq5 is set high as a result of exceeding time limit. sector erase sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional unlock write cycles, and finally the sector erase command. identify the sector to be erased by addressing any location in the sector. the address is latched on the falling edge of w e ; the command, 30h is latched on the rising edge of w e . the sector erase operation begins after a sector erase time-out. to erase multiple sectors, write the sector erase command to each of the addresses of sectors to erase after following the six bus cycle operation above. timing between writes of additional sectors must be less than the erase time-out period, or the AS29LV400 ignores the command and erasure begins. during the time-out period any falling edge of w e resets the time-out. any command (other than sector erase or erase suspend) during time-out period resets the AS29LV400 to read mode, and the device ignores the sector erase command string. erase such ignored sectors by restarting the sector erase command on the ignored sectors. the entire array need not be written with 0s prior to erasure. AS29LV400 writes 0s to the entire sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected sectors unaffected. AS29LV400 requires no cpu control or timing signals during sector erase operations. automatic sector erase begins after sector erase time-out from the last rising edge of w e from the sector erase command stream and ends when the data polling (dq7) is logical 1. data polling address must be performed on addresses that fall within the sectors being erased. AS29LV400 returns to read mode after sector erase unless dq5 is set high by exceeding the time limit. item description
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 9 of 25 status operations erase suspend erase suspend allows interruption of sector erase operations to read data from or program data to a sector not being erased. erase suspend applies only during sector erase operations, including the time-out period. writing an erase suspend command during sector erase time-out results in immediate termination of the time-out period and suspension of erase operation. AS29LV400 ignores any commands during erase suspend other than read/reset, program or erase resume commands. writing the erase resume command continues erase operations. addresses are don?t care when writing erase suspend or erase resume commands. AS29LV400 takes 0.2?15 s to suspend erase operations after receiving erase suspend command. to determine completion of erase suspend, either check dq6 after selecting an address of a sector not being erased, or poll ry/by . check dq2 in conjunction with dq6 to determine if a sector is being erased. AS29LV400 ignores redundant writes of erase suspend. while in erase-suspend mode, AS29LV400 allows reading data (erase-suspend-read mode) from or programming data (erase-suspend-program mode) to any sector not undergoing sector erase; these operations are treated as standard read or standard programming mode. AS29LV400 defaults to erase-suspend-read mode while an erase operation has been suspended. write the resume command 30h to continue operation of sector erase. AS29LV400 ignores redundant writes of the resume command. AS29LV400 permits multiple suspend/resume operations during sector erase. sector protect when attempting to write to a protected sector, data polling and toggle bit 1 (dq6) are activated for about <1 s. when attempting to erase a protected sector, data polling and toggle bit 1 (dq6) are activated for about <5 s. in both cases, the device returns to read mode without altering the specified sectors. ready/busy ry/b y indicates whether an automated on-chip algorithm is in progress (ry/b y = low) or completed (ry/b y = high). the device does not accept program/erase commands when ry/b y = low. ry/b y = high when device is in erase suspend mode. ry/by = high when device exceeds time limit, indicating that a program or erase operation has failed. ry/by is an open drain output, enabling multiple ry/by pins to be tied in parallel with a pull up resistor to v cc . data polling (dq7) only active during automated on-chip algorithms or sector erase time outs. dq7 reflects complement of data last written when read during the automated on-chip program algorithm (0 during erase algorithm); reflects true data when read after completion of an automated on-chip program algorithm (1 after completion of erase agorithm). toggle bit 1 (dq6) active during automated on-chip algorithms or sector erase time outs. dq6 toggles when c e or oe toggles, or an erase resume command is invoked. dq6 is valid after the rising edge of the fourth pulse of w e during programming; after the rising edge of the sixth w e pulse during chip erase; after the last rising edge of the sector erase we pulse for sector erase. for protected sectors, dq6 toggles for <1 s during program mode writes, and <5 s during erase (if all selected sectors are protected). exceeding time limit (dq5) indicates unsuccessful completion of program/erase operation (dq5 = 1). data polling remains active. if dq5 = 1 during chip erase, all or some sectors are defective; during byte programming or sector erase, the sector is defective (in this case, reset the device and execute a program or erase command sequence to continue working with functional sectors). attempting to program 0 to 1 will set dq5 = 1. item description
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 10 of 25 write operation status dq2 toggles when an erase-suspended sector is read repeatedly. dq6 toggles when any address is read repeatedly. dq2 = 1 if byte address being programmed is read during erase-suspend program mode. ? dq2 toggles when the read address applied points to a sector which is undergoing erase, suspended erase, or a failure to erase. sector erase timer (dq3) checks whether sector erase timer window is open. if dq3 = 1, erase is in progress; no commands will be accepted. if dq3 = 0, the device will accept sector erase commands. check dq3 before and after each sector erase command to verify that the command was accepted. toggle bit 2 (dq2) during sector erase, dq2 toggles with oe or c e only during an attempt to read a sector being erased. during chip erase, dq2 toggles with oe or ce for all addresses. if dq5 = 1, dq2 toggles only at sector addresses where failure occurred, and will not toggle at other sector addresses. use dq2 in conjunction with dq6 to determine whether device is in auto erase or erase suspend mode. status dq7 dq6 dq5 dq3 dq2 ry/ by standard mode auto programming d q 7 toggle 0 n/a no toggle 0 program/erase in auto erase 0 toggle 0 1 toggle ? 0 erase suspend mode read erasing sector 1 no toggle 0 n/a toggle 1 read non-erasing sector data data data data data 1 program in erase suspend d q 7 toggle 0 n/a toggle ? 0 exceeded time limits auto programming (byte) d q 7 toggle 1 n/a no toggle 1 program/erase in auto erase 0 toggle 1 n/a toggle ? 1 program in erase suspend (non-erase suspended sector) dq 7 toggle 1 n/a no toggle 1
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 11 of 25 automated on-chip programming algorithm automated on-chip erase algorithm ? the system software should check the status of dq3 prior to and following each subsequent sector erase command to ensure command completion. the device may not have accepted the command if dq3 is high on second status check. start 555h/aah 2aah/55h 555h/a0h program address/program data program command sequence 16 mode (address/data): write program command sequence (see below) data polling or toggle bit successfully completed last address? programming completed yes increment address no 555h/aah 2aah/55h 555h/80h erase command sequence 555h/aah 2aah/55h sector address/30h erase complete 16 mode (address/data): data polling or toggle bit successfully completed write erase command sequence (see below) 555h/aah 2aah/55h 555h/80h chip erase command sequence 555h/aah 2aah/55h 555h/10h 16 mode (address/data): individual sector/multiple sector sector address/30h sector address/30h optional sector erase commands start
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 12 of 25 programming using unlock bypass command start write unlock bypass command (3 cycles) write unlock bypass program command (2 cycles) data polling or last address? yes increment address no write unlock bypass reset command (2 cycles) programming completed toggle bit successfully completed 555h/aah 2aah/55h 555h/20h unlock bypass command sequence x16 mode (address/data) xxxh/a0h unlock bypass program x16 mode (address/data) command sequence program address/ program data xxxh/90h unlock bypass reset x16 mode (address/data) command sequence xxxh/00h
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 13 of 25 data polling algorithm ? va = byte address for programming. va = any of the sector addresses within the sector being erased during sector erase. va = valid address equals any non-protected sector group address during chip erase. ? dq7 rechecked even if dq5 = 1 because dq5 and dq7 may not change simultaneously. toggle bit algorithm ? dq6 rechecked even if dq5 = 1 because dq6 may stop toggling when dq5 changes to 1. read byte (dq0?dq7) address = va ? read byte (dq0?dq7) address = va no done no no ? yes fail yes ? yes done dq7 = data ? dq5 = 1 ? dq7 = data ? ? read byte (dq0?dq7) address = don?t care read byte (dq0?dq7) address = don?t care no done yes yes yes fail no no done dq6 = toggle ? dq6 = toggle ? ? dq5 = 1 ?
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 14 of 25 sector protect algorithm sector unprotect algorithm start plscnt = 1 reset# = v id wait 1 s first write cycle=60h? temporary sector unprotect mode no set up sector sector protect: address write 60h to sector address with a6=0, a1=1, a0=0 wait 150 s verify sector protect; write 40h to sector address with a6=0, a1=1, a0=0 read from sector address with a6=0, a1=1, a0=0 data=01h? protect sector? plscnt=25? no increment plscnt no device failed yes yes yes no start plscnt = 1 reset# = v id wait 1 s first write cycle=60h? temporary sector unprotect mode no yes all sectors protected? set up first sector unprotect: sector address write 60h to sector address with a6=1, a1=1, a0=0 wait 15 ms verify sector unprotect; write 40h to sector address with a6=1, a1=1, a0=0 read from sector address with a6=1, a1=1, a0=0 data=00h? last sector verified? no yes yes remove v id from reset# write reset command sector unprotect complete remove v id from reset# write reset command sector protect complete plscnt increment plscnt no device failed yes =1000? set up next sector address no protect all sectors: the shaded portion of the sector protct initiated for all unprotected sectors before calling the sector unprotect no yes yes algorithm must be another
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 15 of 25 dc electrical characteristics v cc = 2.7?3.6v parameter symbol test conditions min max unit input load current i li v in = v ss to v cc , v cc = v cc max -1 a a9 input load current i lit v cc = v cc max , a9 = 10v 35 a output leakage current i lo v out = v ss to v cc , v cc = v cc max -1 a active current, read @ 5mhz i cc1 ce = v il , o e = v ih -20ma active current, program/erase i cc2 ce = v il , o e = v ih -100ma automatic sleep mode * * automatic sleep mode enables the deep power down mode when addresses are stable for 150 ns. typical sleep mode current is 200 na. i cc3 ce = v il , o e = v ih ; v il = 0.3v, v ih = v cc - 0.3v -5a standby current i sb ce = v cc - 0.3v, r e s e t = v cc - .3v - 5 a deep power down current 3 i pd reset = 0.3v - 5 a input low voltage v il -0.5 0.8 v input high voltage v ih 0.7v cc v cc + 0.3 v output low voltage v ol i ol = 4.0ma, v cc = v cc min -0.45v output high voltage v oh i oh = -2.0 ma, v cc = v cc min 0.85v cc -v low v cc lock out voltage v lko 1.5 - v input hv select voltage v id 911v
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 16 of 25 ac parameters ? read cycle read waveform jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max t avav t rc read cycle time 70 80 - 90 - 120 - ns t av q v t acc address to output delay - 70 - 80 - 90 - 120 ns t elqv t ce chip enable to output - 70 - 80 - 90 - 120 ns t glqv t oe output enable to output - 30 - 30 - 35 - 50 ns t oes output enable setup time 0 - 0 - 0 - 0 - ns t ehqz t df chip enable to output high z - 20 - 20 - 30 - 30 ns t ghqz t df output enable to output high z - 20 - 20 - 30 - 30 ns t axqx t oh output hold time from addresses, first occurrence of c e or o e 0-0-0-0- ns t oeh output enable hold time: read 10 - 10 - 10 - 10 - ns output enable hold time: toggle and data polling 10 - 10 - 10 - 10 - ns t phqv t rh reset high to output delay - 50 - 50 - 50 - 50 ns t ready reset pin low to read mode - 10 - 10 - 10 - 10 s t rp reset pulse 500 500 - 500 - 500 - ns addresses stable addresses t rc t acc t oe t oeh t ce t oh t df ce oe we outputs high z high z output valid t rh reset t oes
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 17 of 25 ac parameters ? write cycle we controlled write waveform we controlled jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max t avav t wc write cycle time 70 - 80 - 90 - 120 - ns t av wl t as address setup time 0 - 0 - 0 - 0 - ns t wlax t ah address hold time 45 - 45 - 45 - 50 - ns t dvwh t ds data setup time 35 - 35 - 45 - 50 - ns t whdx t dh data hold time 0 - 0 - 0 - 0 - ns t ghwl t ghwl read recover time before write 0 - 0 - 0 - 0 - ns t elwl t cs ce setup time 0-0-0-0-ns t wheh t ch ce hold time 0-0-0-0-ns t wlwh t wp write pulse width 35 - 35 - 35 - 50 - ns t whwl t wph write pulse width high 30 - 30 - 30 - 30 - ns addresses ce oe we data t wc t as t ah t ghwl ; t oes t wp t cs t wph t dh t whwh1 or 2 t ds dq 7d out program 555h program address program address 3rd bus cycle t ch data polling a0h data
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 18 of 25 ac parameters ? write cycle 2 ce controlled write waveform 2 ce controlled jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max t avav t wc write cycle time 70 - 80 - 90 - 120 - ns t av el t as address setup time 0 - 0 - 0 - 0 - ns t elax t ah address hold time 45 - 45 - 45 - 50 - ns t dveh t ds data setup time 35 - 35 - 45 - 50 - ns t ehdx t dh data hold time 0 - 0 - 0 - 0 - ns t ghel t ghel read recover time before write 0 - 0 - 0 - 0 - ns t wlel t ws we setup time 0 - 0 - 0 - 0 - ns t ehwh t wh we hold time 0 - 0 - 0 - 0 - ns t eleh t cp ce pulse width 35 - 35 - 35 - 50 - ns t ehel t cph ce pulse width high 30 - 30 - 30 - 30 - ns addresses we oe ce data program address 555h program address a0h program dq 7d out t wc t as t ah t cp t cph t dh t ds t whwh1 or 2 data polling data t ghel , t oes
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 19 of 25 ac parameters ? temporary sector unprotect temporary sector unprotect waveform ac parameters ? reset reset waveform erase waveform 16 mode jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max t vidr v id rise and fall time 500 - 500 - 500 - 500 - ns t rsp reset setup time for temporary sector unprotect 4-4-4-4-s jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max t rp reset pulse 500 - 500 - 500 - 500 - ns t rh reset high time before read - 50 - 50 - 50 - 50 ns t ready reset low to read mode - 10 - 10 - 10 - 10 s reset ce we ry/by 0 or 3v t vidr t vidr 0 or 3v t rsp program/erase command sequence 10v reset ry/by dq t rp t ready t rp t rh valid data valid data status status addresses ce oe we data 555h 2aah 555h 555h 2aah sector address t wc t as t ah t ghwl aah 55h 80h aah 55h 30h 10h for chip erase t wp t cs t wph t dh t ds t wc
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 20 of 25 ac parameters ? ready/busy ry/ by waveform data polling waveform toggle bit waveform jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max -t vcs v cc setup time 50 - 50 - 50 - 50 - s -t rb recovery time from ry/by 0-0-0-0- ns -t busy program/erase valid to ry/by delay 90 - 90 - 90 - 90 - ns ce we ry/ by rising edge of last we signal program/erase operation tri-stated open-drain v cc t vcs t rb t busy ce oe we dq7 t ch t oh t whwh1 or 2 t oe t oeh t ce t df high z input dq7 output dq 7output ce we oe dq6 t oeh t dh t oe toggle toggle no toggle
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 21 of 25 word/byte configuration byte read waveform byte write waveform sector protect/unprotect jedec symbol std symbol parameter -70 -80 -90 -120 unit min max min max min max min max -t elfl /t elfh ce to byte switching low or high - 10 - 10 - 10 - 10 ns -t flqz byte switching low to output high-z - 30 - 30 - 35 - 40 ns -t fhqz byte switching high to output active 70 - 80 - 90 - 120 - ns ce oe byte dq0-dq14 dq15/a-1 byte dq0-dq14 dq15/a-1 byte wo r d to byte byte to wo r d data output data output address input dq15 output data output dq0-dq7 dq0-dq14 dq0-dq7 data output dq0-dq14 address input dq15 output t elfl t elfh t flqz t fhqv ce we byte falling edge of last we signal t set (t as )t hold (t ah ) see erase/program operations table for t as and t ah specifications. reset# ce# oe# * for sector protect, a6=0, a1=1, a0=0. for sector unprotect, a6=1, a1=1, a0=0. v id v ih valid* valid* valid* sa, a6, a1, a0 60h 40h status 60h data sector protect/unprotect 1 s sector protect: 100 s sector unprotect: 10 ms we# verify don?t care don?t care don?t care don?t care don?t care
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 22 of 25 ac test conditions test specifications erase and programming performance latchup tolerance includes all pins except v cc . test conditions: v cc = 3.0v, one pin at a time. test condition -70, -80 -90, -120 unit output load 1 ttl gate output load capacitance c l (including jig capacitance) 30 100 pf input rise and fall times 5 ns input pulse levels 0.0-3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v parameter limits unit min typical max sector erase and verify-1 time (excludes 00h programming prior to erase) - 1.0 15 sec programming time byte - 10 300 s wo r d - 1 5 3 6 0 s chip programming time - 7. 2 27 sec erase/program cycles * * erase/program cycle test is not verified on each shipped unit. - 100,000 - cycles parameter min max unit input voltage with respect to v ss on a9, oe , and r e s e t pin -1.0 +12.0 v input voltage with respect to v ss on all dq, address, and control pins -0.5 vcc +0.5 v current -100 +100 ma 6.2k ? c l * 2.7k ? device under test v ss +3.0v v ss v ss 1n3064 or equivalent 1n3064 or equivalent
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 23 of 25 recommended operating conditions absolute maximum ratings stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. exposure to absolute max- imum rating conditions for extended periods may affect reliability. tsop pin capacitance so pin capacitance data retention parameter symbol min max unit supply voltage v cc +2.7 +3.6 v v ss 00v input voltage v ih 1.9 v cc + 0.3 v v il ?0.5 0.8 v parameter symbol min max unit input voltage (input or dq pin) v in ?0.5 v cc + 0.5 v input voltage (a9 pin, oe , r e s e t )v in ?0.5 +12.5 v power supply voltage v cc -0.5 +4.0 v operating temperature t opr ?55 +125 c storage temperature (plastic) t stg ?65 +150 c short circuit output current i out - 150 ma symbol parameter test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 8 10 pf symbol parameter test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 8 10 pf parameter temp.(c) min unit minimum pattern data retention time 150 10 years 125 20 years
? AS29LV400 march 2001 3/20/01; v.0.9.3 alliance semiconductor p. 24 of 25 e b e hd d 48-pin 1220 min max a ? 1.27 a1 0.05 0.15 a2 0.95 1.05 b0.170.27 c 0.15 nominal d 18.20 18.60 e 0.50 nominal e 11.90 12.10 hd 19.80 20.20 l0.500.70 0 5 c l a1 a a2 48-pin pin 1 pin 48 pin 24 pin 25 t hin small outline package (tsop-i) p ackage dimensions d h e 1234567891011121314 44 43 42 41 40 39 38 37 36 35 34 33 32 31 15 16 30 29 17 18 19 20 28 27 26 25 c l a 1 a 2 e so 0?10 21 24 22 23 e a b jedec mo - 175 aa 44-pin so min (mm) max (mm) a?3.1 a1 0.05 ? a2 2.5 2.9 b0.250.45 c0.09 0.25 d 28.0 28.4 e 12.4 12.8 e 1.27 (typical) he 16.05 (typical) l0.731.3 small outline plastic (so) package dimensions
? AS29LV400 march 2001 ? copyright alliance semiconductor corporation. all rights reserved. our three-point logo, our name and intelliwatt are tradema rks or registered trademarks of alliance. all other brand and product names may be the trademarks of their respective companies. alliance reserves the right to make changes to this document and its products at any time without notice. alliance assumes no responsibility for any errors that may appear in this document. the data contained herein represents alliance?s best data and/or estimates at the time of issuance . alliance reserves the right to change or correct this data at any time, without notice. if the product described herein is under development, significant changes to these specifications are possible. the inf ormation in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or cus tomer. alliance does not assume any responsibility or liability arising out of the appli- cation or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use o f alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in alliance?s terms and conditions of sale (which are available from alliance). all sales of alliance products are made exclusively according to alliance?s terms and conditions of sale. the purchase of products from alliance does not convey a license under any patent rights, copyrights, mask works rights, trademarks, or any other intellectual property rights of alliance or third parties. alliance does not authorize its products fo r use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of alliance products in such life-sup porting systems implies that the manufacturer assumes all risk of such use and agrees 3/20/01; v.0.9.3 alliance semiconductor p. 25 of 25 AS29LV400 ordering codes AS29LV400 part numbering system package \ access time 70 ns (commercial/ industrial) 80 ns (commercial/ industrial) 90 ns (commercial/ industrial) 120 ns (commercial/ industrial) tsop, 1220 mm, 48-pin top boot configuration AS29LV400t-70tc AS29LV400t-70ti AS29LV400t-80tc AS29LV400t-80ti AS29LV400t-90tc AS29LV400t-90ti AS29LV400t-120tc AS29LV400t-120ti tsop, 1220 mm, 48-pin bottom boot configuration AS29LV400b-70tc AS29LV400b-70ti AS29LV400b-80tc AS29LV400b-80ti AS29LV400b-90tc AS29LV400b-90ti AS29LV400b-120tc AS29LV400b-120ti so, 13.3 mm, 44-pin top boot configuration AS29LV400t-70sc AS29LV400t-70si AS29LV400t-80sc AS29LV400t-80si AS29LV400t-90sc AS29LV400t-90si AS29LV400t-120sc AS29LV400t-120si so, 13.3 mm, 44-pin bottom boot configuration AS29LV400b-70sc AS29LV400b-70si AS29LV400b-80sc AS29LV400b-80si AS29LV400b-90sc AS29LV400b-90si AS29LV400b-120sc AS29LV400b-120si as29lv 400 x ?xxx x x x 3v flash eeprom prefix device number t= top boot configuration b= bottom boot configuration address access time package: s= so t= tsop temperature range: c = commercial: 0c to 70c i = industrial: -40c to 85c options: b = burn-in h= high i sb (<1ma) blank= standard shaded area indicates advance information. avialability of so package is tbd.

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